| PART |
Description |
Maker |
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
|
| CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| PSTG50HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
| PSTG25HDT12 |
Powerline N-Channel Trench Gate-IGBT Module
Powerline N-Channel Trench Gate IGBT Module
|
Powersem GmbH
Meder Electronic
|
| GT10.DA120U |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
|
Vishay Siliconix
|
| STGWT40H65FB STGW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
